发明名称 Pumping MOS capacitor
摘要 A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.
申请公布号 US7902632(B2) 申请公布日期 2011.03.08
申请号 US20080327559 申请日期 2008.12.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI JUN-KI
分类号 H01L29/00 主分类号 H01L29/00
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