| 发明名称 |
Graded high germanium compound films for strained semiconductor devices |
| 摘要 |
Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
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| 申请公布号 |
US7902009(B2) |
申请公布日期 |
2011.03.08 |
| 申请号 |
US20080316510 |
申请日期 |
2008.12.11 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SIMONELLI DANIELLE;MURTHY ANAND |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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