| 摘要 |
<p>PURPOSE: An I-line negative type photoresist composition for semiconductor patterning is provided to ensure a high residual film rate, excellent development even at low exposure energy, and an excellent photoresist profile. CONSTITUTION: An I-line negative type photoresist composition for semiconductor patterning comprises a photosensitive polymer which is a compound represented by chemical formula 1 or a compound represented by chemical formula 2. In chemical formula 1, R is anthracene, anthraquinone, naphthoquinone, diamino benzophenone, coumarin, thioxanthone, and a combination thereof, and n is an integer of 50-10,000.</p> |
