METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICES

摘要

PURPOSE: A semiconductor memory device manufacturing method is provided to reduce the loading capacitance of the bit line by not forming a spacer near the bit line. CONSTITUTION: A first insulation layer(120) is formed on a semiconductor substrate where a first area(104b) and a second area(104a) are defined. A bit line contact(124) passing through the first insulation layer is formed on the second area. A second insulation layer(130) is formed on the first insulation layer and the bit line contact.