METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE

摘要

PURPOSE: A light emitting diode manufacturing method using the laser lift off technology is provided to easily focus the beam of the laser by alleviating the warpage of the growth substrate when separating the substrate using the laser lift off manner. CONSTITUTION: An epi layer(26) comprising a first conductivity type compound semiconductor layer(21), an active layer(23), and a second conductive type compound semiconductor layer(25) is formed on a first substrate(10). A second substrate having the coefficient of thermal expansion being different from the coefficient of thermal expansion of the first substrate is bonded on the epi layer.