发明名称 FILM FORMING METHOD AND STORAGE MEDIUM
摘要 An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.
申请公布号 US2011052810(A1) 申请公布日期 2011.03.03
申请号 US20090918152 申请日期 2009.02.18
申请人 TOKYO ELECTRON LIMITED;ELPIDA MEMORY, INC. 发明人 KAWANO YUMIKO;ARIMA SUSUMU;KAKIMOTO AKINOBU;HIROTA TOSHIYUKI;KIYOMURA TAKAKAZU
分类号 C23C16/22 主分类号 C23C16/22
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