发明名称 |
HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTAL AND METHOD FOR GROWING GROUP III NITRIDE CRYSTAL USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for growing group III nitride crystals using a cylindrical high-pressure vessel. <P>SOLUTION: The method for growing group III nitride crystals using a cylindrical high-pressure vessel includes: a step of loading group III-nitride seed crystals in a crystallization region and a group III-containing source in a nutrient region; a step of loading an alkali metal-containing mineralizer into the high-pressure vessel in a manner that the mineralizer has minimal exposure to oxygen and moisture; a step of sealing the high-pressure vessel; a step of evacuating the high-pressure vessel to pressure less than 1×10<SP>-5</SP>millibar; a step of illing the high-pressure vessel with ammonia; a step of ramping the temperature of the crystallization region above 500°C; a step of maintaining the temperature condition described above for sufficient time to grow crystals; a step of releasing ammonia to stop crystal growth; and a step of unsealing the high-pressure vessel. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011042568(A) |
申请公布日期 |
2011.03.03 |
申请号 |
JP20100188936 |
申请日期 |
2010.08.25 |
申请人 |
SIXPOINT MATERIALS INC |
发明人 |
HASHIMOTO TADAO;LETTS EDWARD;IKARI MASANORI |
分类号 |
C30B29/38;C30B7/10;C30B33/00 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|