发明名称 THIN FILM FORMING METHOD AND THIN FILM STACK
摘要 A thin film forming method by a plasma discharging treatment under atmospheric pressure with a thin film forming apparatus which has a first discharging space for forming a functional thin film on a substrate, and a second discharge space for post-treating the substrate which formed the thin film. The first discharge space has a roller electrodes pair. The thin film forming method includes, a film forming process at the first discharge space which includes the steps of transporting the substrate by the roller electrodes; supplying discharging gas and thin film forming gas into the first discharging space; and generating a high frequency electric field between the roller electrodes. The post-treatment process includes the steps of introducing the substrate on which the functional film is formed; and supplying a discharging gas and post-treatment gas between the facing electrodes; and, generating a high frequency electric field between the facing electrode and the roller electrode.
申请公布号 US2011052924(A1) 申请公布日期 2011.03.03
申请号 US20100854831 申请日期 2010.08.11
申请人 KONICA MINOLTA HOLDINGS, INC. 发明人 OISHI KIYOSHI
分类号 C23C16/507;B32B9/00 主分类号 C23C16/507
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