发明名称 |
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECTION SEALS |
摘要 |
Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.
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申请公布号 |
US2011049682(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100873147 |
申请日期 |
2010.08.31 |
申请人 |
VISHAY-SILICONIX |
发明人 |
LU HAMILTON;CHAU THE-TU;TERRILL KYLE;PATTANAYAK DEVA N.;SHI SHARON;CHEN KUO-IN;XU ROBERT |
分类号 |
H01L29/06;H01L21/203;H01L21/302 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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