| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a contact hole excellent in accuracy of a shape, wherein aperture defect is eliminated. SOLUTION: The semiconductor device includes a substrate 4, a first wiring pattern 2 on the substrate, interlayer dielectrics 6, 8 on a surface of the substrate 4 on the side where the first wiring pattern 2 is provided, and a second wiring pattern on the interlayer dielectrics 6, 8, and further includes a contact hole CH in the interlayer dielectrics 6, 8 to connect the first wiring pattern 2 and second wiring pattern to each other. The substrate 4 has a region where the ratio (density) of presence of the first wiring pattern 2 per unit area of the substrate 4 is higher and a region where the ratio is lower, wherein the aperture area of the contact hole CH is smaller in the region of the lower ratio than in the region of the higher ratio. COPYRIGHT: (C)2011,JPO&INPIT |
