| 摘要 |
A semiconductor manufacturing process is provided. First, a substrate is provided, wherein a patterned conductive layer, a dielectric layer and a patterned metal hard mask layer are sequentially formed thereon. Thereafter, a portion of the dielectric layer is removed to form a damascene opening exposing the patterned conductive layer. Afterwards, the dielectric layer is heated to above 200° C. Thereafter, a plasma treatment process is performed on the damascene opening, wherein the gases used to generate the plasma include hydrogen gas and inert gas. Afterwards, a conductive layer is formed in the damascene opening to fill therein.
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