| 摘要 |
A semiconductor storage device, in which successive reading and successive writing of data having a predetermined length from and to a memory cell specified by a certain address are performed, includes a plurality of memory cells, address input terminals through which the address is input, data output terminals through which read data having the predetermined length is output, and data input terminals through which write data having the predetermine length is input. Part of the address input terminals are also used as the data output terminals. In this way, the operation of successive reading and successive writing performed in succession at the same address can be made faster without increasing the number of terminals.
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