发明名称 |
SEMICONDUCTOR DEVICE HAVING SILANE TREATED INTERFACE |
摘要 |
A semiconductor device made on a polymer substrate (10) using graphic arts printing technology uses a printable organic semiconductor. An electrode (14) is situated on the substrate (10), and a dielectric layer (20) is situated over the electrode (14). Another electrode(s) (25, 26) is situated on the dielectric layer (20). The exposed surfaces of the dielectric (20) and the top electrode (25, 26) are treated with a reactive silane to alter the surface of the electrode (25, 26) and the dielectric (20) sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode (25, 26) and the dielectric (20). In various embodiments, the electrodes (14, 25, 26) may be printed, and the dielectric layer (20) may also be printed. |
申请公布号 |
WO2010019357(A3) |
申请公布日期 |
2011.03.03 |
申请号 |
WO2009US51330 |
申请日期 |
2009.07.22 |
申请人 |
MOTOROLA, INC.;ZHANG, JIE;GAMOTA, DANIEL, R.;JIANG, LIN |
发明人 |
ZHANG, JIE;GAMOTA, DANIEL, R.;JIANG, LIN |
分类号 |
H01L51/10;H01L51/40 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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