| 摘要 |
A method of programming a differential flash memory cell having a first and a second memory cell is disclosed. The first memory cell includes a first transistor associated with a first threshold voltage and the second memory cell includes a second transistor associated with a second threshold voltage. The method includes reading the first and second memory cells to determine a current associated with the first and second threshold voltages. The first threshold voltage is equal to a first value and the second threshold voltage is equal to a second value. The method further includes determining if the first current corresponds to a predetermined logic state. If the current does not correspond to the predetermined logic state, the first and second memory cells are programmed. The programming includes changing the first threshold voltage from the first value to a third value and the second threshold voltage from the second value to a fourth value.
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