发明名称 |
Solar Cell Defect Passivation Method |
摘要 |
The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
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申请公布号 |
US2011053351(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100853232 |
申请日期 |
2010.08.09 |
申请人 |
ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGYRESEARCH |
发明人 |
TSAI WEN-FA;LIAO JYONG-FONG;CHEN YEN-YU;LIU CHEE WEE;AI CHI-FONG |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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