| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semipolar group III nitride substrate having a low defect density and high quality. SOLUTION: This method comprises the step of preparing a sapphire substrate 10, the step of forming an intermediate layer 11 containing aluminum and nitrogen on the sapphire substrate 10 by a vapor phase growth method at a growth temperature of 1,100-1,300°C, and the step of growing a group III nitride layer 12 on the intermediate layer 11. The sapphire substrate 10 has the principal plane on which the intermediate layer 11 is grown and which is vertical to the m-axis of the sapphire substrate 10 or is slant to the m-axis of the sapphire substrate 10. Further, in the step of growing the group III nitride layer 12, after a mask is formed on a first thin film layer 12a, a second thick layer 12b may be fromed, thereby lowering the bonding strength between the first thin film layer 12a and the second thick layer 12b, and easily separating the base substrate 10 at a relatively small stress, whereby a self-supporting substrate of the group III nitride layer 12 can be obtained. COPYRIGHT: (C)2011,JPO&INPIT |
