发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD |
摘要 |
A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.
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申请公布号 |
US2011049581(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20090553249 |
申请日期 |
2009.09.03 |
申请人 |
RAYTHEON COMPANY |
发明人 |
CHUMBES EDUARDO M.;HOKE WILLIAM E.;IP KELLY P.;SHAW DALE M.;BRIERLEY STEVEN K. |
分类号 |
H01L27/06;H01L21/02;H01L21/302;H01L21/31;H01L29/38 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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