| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of making a semiconductor device having large charge carrier mobility, for example. SOLUTION: The method is provided for making the semiconductor device by a step of forming a superlattice including a plurality of stacked groups of layers. The method includes a step of forming regions for causing transport of charge carriers through the superlattice in a parallel direction to the stacked groups of layers. Each group of layers of the superlattice includes a plurality of stacked base semiconductor molecular layers defining a base semiconductor portion and an energy-band-modifying layer on the base semiconductor portion. The energy-band-modifying layer includes at least one non-semiconductor molecular layer constrained within a crystal lattice adjacent to the base semiconductor portion so that the superlattice has higher charge carrier mobility in the parallel direction than a case without the superlattice. In addition, the superlattice may have a common energy band structure. COPYRIGHT: (C)2011,JPO&INPIT |
