| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a monolithic white light emitting element using wafer bonding or metal bonding. <P>SOLUTION: The white light emitting element 130 includes: a sub-mount substrate 131 having a p-side lead terminal 132a and an n-side lead terminal 132b formed on the upper surface thereof; a first light emitting part 120 formed by sequentially laminating a p-type nitride semiconductor layer 126, first active layers 124 and 125, an n-type nitride semiconductor layer 123, and an insulating substrate 121 in this order, wherein the p-type and the n-type nitride semiconductor layers connected to the p-side and the n-side lead terminals, respectively; a metal layer 138 formed on one area of the insulating substrate; a second light emitting part 140 bonded to this area of the metal layer and formed by sequentially laminating a p-type AlGaInP-based semiconductor layer 146, a second active layer 145, and an n-type AlGaInP-based semiconductor layer 142 in this order; a p-side electrode 148 and an n-side electrode 149 formed on the other area of the metal layer and the n-type AlGaInP-based semiconductor layer, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT |
