| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for treating exhaust gas, in which hydrazine derivatives included in the exhaust gas to be discharged from a semiconductor manufacturing process can be effectively detoxified and to provide a detoxifying agent. <P>SOLUTION: The exhaust gas including hydrazine or hydrazine derivatives is brought into contact with the detoxifying agent including ferric oxide as a main reactive component. Particularly, the exhaust gas including at least one of an organometallic compound, an amine compound and volatile inorganic hydride is brought into contact with the detoxifying agent first to detoxify the hydrazine or hydrazine derivatives. Then, the organometallic compound, the amine compound and volatile inorganic hydride included in the exhaust gas are surely detoxified. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
