发明名称 |
Contact scheme for MOSFETs |
摘要 |
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a contact extending from a top surface of the first ILD into the first ILD; a second ILD over the first ILD; a bottom inter-metal dielectric (IMD) over the second ILD; and a dual damascene structure comprising a metal line in the IMD and a via in the second ILD, wherein the via is connected to the contact. |
申请公布号 |
US7898037(B2) |
申请公布日期 |
2011.03.01 |
申请号 |
US20070833128 |
申请日期 |
2007.08.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG HARRY;THEI KONG-BENG;LIANG MONG SONG;KAO JUNG-HUI;CHUNG SHENG-CHEN;CHENG CHUNG LONG;LIAO SHUN-JANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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