发明名称 Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
摘要 A bit line select voltage generator includes a first and second voltage generators and a voltage transmission unit. The first voltage generator operates to divide a reference voltage of a reference voltage generator to generate a first voltage and a second voltage, wherein the second voltage is lower than the first voltage. The second voltage generator operates to change the first voltage according to change of temperatures thereby generating a third voltage. The voltage transmission unit operates to transmit the second voltage or the third voltage to an output terminal according to a voltage level of a first voltage transmit control signal or a second voltage transmit control signal.
申请公布号 US7898870(B2) 申请公布日期 2011.03.01
申请号 US20100790579 申请日期 2010.05.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JIN-HAENG
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
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