发明名称 |
Method for manufacturing flat substrates |
摘要 |
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).
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申请公布号 |
US7897966(B2) |
申请公布日期 |
2011.03.01 |
申请号 |
US20090372813 |
申请日期 |
2009.02.18 |
申请人 |
OERLIKON SOLAR AG, TRUBBACH |
发明人 |
TRAN QUOC HAI;VILLETTE JEROME |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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