| 发明名称 |
Apparatus and method for regional plasma control |
| 摘要 |
An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
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| 申请公布号 |
US7897008(B2) |
申请公布日期 |
2011.03.01 |
| 申请号 |
US20060553590 |
申请日期 |
2006.10.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG SHIH MING;LU CHI-LUN |
| 分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
| 代理机构 |
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代理人 |
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