发明名称 |
ETCHING SOLUTION COMPOSITION FOR FORMATION OF METAL LINE |
摘要 |
PURPOSE: An etching solution composition is provided to improve productivity of etching process and to ensure quick etching speed without damage to equipment. CONSTITUTION: An etching solution composition contains 1-20 weight% of H_2O_2; 1-15 weight% of compound in which nitrate ion is dissolved; 1-5 weight% of persulfated salt compound, 0.01-5 weight% of cyclic amine compound; and remaining amount of water. The compound in which nitrate ion is dissolved is one or more selected from the group consisting of ammonium nitrate, sodium nitrate, potassium nitrate, and nitric acid.
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申请公布号 |
KR20110019602(A) |
申请公布日期 |
2011.02.28 |
申请号 |
KR20090077208 |
申请日期 |
2009.08.20 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LIM, MIN KI;LEE, SUCK JUN;JANG, SANG HOON;PARK, YOUNG CHUL |
分类号 |
C09K13/08 |
主分类号 |
C09K13/08 |
代理机构 |
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地址 |
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