Semiconductor device and manufacturing method thereof

摘要

A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1x10¹⁹/cm³ to 1x10²¹/cm³ and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5x10¹⁹/cm³ to 3x10²¹/cm³ and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.