<p>The invention relates to the field of microwave devices and it is used to modulate the phase of the wave propagating in the waveguide. The SiC waveguide modulator consists of 4main components: the metal waveguide (1) for excitation of the SiC waveguide; the metal contacts (2); the source of the constant current (3); the SiC waveguide (4) with the propagating modes. The SiC waveguide is excited by placing it inside a metal waveguide. The modes propagate in the SiC waveguide. The main mode is emitted at the sharp end of the waveguide. The current flows at the waveguide. By this reason the SiC material heats till 1800 oC. The voltage is changed and by this way the temperature changes. Therefore we get the phase shift.</p>
申请公布号
LT5710(B)
申请公布日期
2011.02.25
申请号
LT20100000040
申请日期
2010.05.13
申请人
VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS
发明人
GRIC, TATJANA;NICKELSON, LIUDMILA;ASMONTAS, STEPONAS