| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which variation of data erasure property is suppressed without increasing risk of erroneous write. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a memory cell array having a plurality of first wiring lines, a plurality of second wiring lines crossing with the plurality of first wiring lines, and a plurality of memory cells comprising variable resistance elements arranged at respective cross points of the plurality of first and the second wiring lines; and a control means selecting the prescribed memory cell, generating an erasing pulse for erasing data in which pulse width is increased or decreased exponentially in accordance with access path length to this selected memory cell, and supplying the erasing pulse to this selected memory cell. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
