| 摘要 |
According to one embodiment, a solid-state imaging device with an array arrangement of unit pixels including photoelectric conversion parts configured to generate signal charges by photoelectric conversion and a signal scanning circuit part, the signal scanning circuit part being provided on a second semiconductor layer different from a first semiconductor layer including the photoelectric conversion parts, the second semiconductor layer being stacked above the front side of the first semiconductor layer via an insulating film, and the first semiconductor layer being so configured that a pixel separation insulating film is buried in pixel boundary parts and read transistors configured to read signal charges generated by the photoelectric conversion parts are formed at the front side of the first semiconductor layer.
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