METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER

摘要

Disclosed is a method for manufacturing a silicon epitaxial wafer by forming an epitaxial layer on the surface of a silicon wafer obtained by slicing a silicon single crystal. The method is characterized in that at least the silicon wafer is obtained by slicing the silicon single crystal having a resistivity of 1.0-1.7 m?cm by being doped with arsenic, a pit is generated by heat-treating the silicon wafer at a temperature of 850-1200°C, the generated pit is removed by mirror-polishing the heat-treated silicon wafer, then, an epitaxial layer is formed on the mirror-polished silicon wafer surface. Thus, at the time of performing epitaxial growing on the arsenic-doped low-resistivity silicon wafer, lamination defects can be prevented from being generated by means of the simple method.