| 摘要 |
<p>Provided is a magnetic sensor device (1) comprising the following integrated on a single semiconductor chip: a plurality of electromagnetic transducers (10X, 10Y) separated by a prescribed inter-element distance d; and a first signal-processing circuit (20X-80X, 90) and second signal-processing circuit (20Y-80Y, 90) that generate, respectively, a plurality of output signals (OUTX, OUTY), the logic levels of which change, respectively, in accordance with magnetic field strengths or polarities detected by the plurality of electromagnetic transducers (10X, 10Y).</p> |
