THIN FILM TRANSISTOR

摘要

Disclosed is a thin film transistor in which a metal silicon compound thin film is used as a channel region. Specifically disclosed is a thin film transistor which is characterized in that a metal silicon compound thin film that is composed of a compound of a transition metal and silicon is used as a channel region, said compound of a transition metal and silicon containing, as a unit structure, a transition metal-containing silicon cluster in which the transition metal is surrounded by 7-16 silicon atoms and silicon atoms are located as the first and second nearest neighboring atoms of the transition metal.