VIAS AND CONDUCTIVE ROUTING LAYERS IN SEMICONDUCTOR SUBSTRATES
摘要
Through vias and conductive routing layers in semiconductor substrates and associated methods of manufacturing are disclosed herein. In one embodiment, a method for processing a semiconductor substrate includes forming an aperture in a semiconductor substrate and through a dielectric on the semiconductor substrate. The aperture has a first end open at the dielectric and a second end opposite the first end. The method can also include forming a plurality of depressions in the dielectric, and simultaneously depositing a conductive material into the aperture and at least some of the depressions.
申请公布号
WO2011022180(A2)
申请公布日期
2011.02.24
申请号
WO2010US43563
申请日期
2010.07.28
申请人
MICRON TECHNOLOGY, INC.;KIRBY, KYLE, K.;NIROUMAND, SARAH, A.