| 摘要 |
A semiconductor device includes a data transmission line and a data transmission line precharge circuit. The data transmission line precharge circuit sets a precharge potential of the data transmission line to a first potential at the time of a first write mode in which data masking is not performed. The data transmission line precharge circuit sets the precharge potential to a potential different from the first potential at the time of a second write mode in which data masking is performed. When data masking is not carried out, precharging to a potential at which data can be written in excellent fashion can be performed. When data masking is carried out, precharging to a potential that inhibits a fluctuation in bit-line potential can be performed.
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