| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method, capable of reducing the possibility of time degradation or alteration of an interlayer insulating film even in a substrate using Low-k material as the interlayer insulating film. SOLUTION: The substrate treatment method for treating a substrate including a dielectric layer having a dielectric constant lower than that of a silicon oxide film includes: a dehydration step of heating the dielectric layer in an atmosphere of an inert gas to perform dehydration condensation treatment thereon; and annealing step of annealing the substrate in an atmosphere of a gas including at least hydrogen atoms. COPYRIGHT: (C)2011,JPO&INPIT
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