发明名称 MULTI-BEAM SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a beam-to-beam difference in a multi-beam semiconductor laser device. SOLUTION: Auxiliary electrode patterns 13Sa and 13Sc are provided on a surface of a sub-mount 10 located in an optical path of backward light emitted from a laser chip 11. Accordingly, respective backward lights emitted from a plurality of light emission sections of the laser chip 11 are incident on a photodiode chip 14 independently from the surface condition of the sub-mount 10, thereby variations of current value caused by the surface condition of the sub-mount 10 is suppressed, and the current value can be monitored with high accuracy. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011040552(A) 申请公布日期 2011.02.24
申请号 JP20090186234 申请日期 2009.08.11
申请人 OPNEXT JAPAN INC 发明人 INOUE HIROTAKA;SENBA YASUHISA;KOZU KOICHI;TAKIZAWA YASUSHI
分类号 H01S5/022;H01S5/22 主分类号 H01S5/022
代理机构 代理人
主权项
地址