| 摘要 |
PROBLEM TO BE SOLVED: To provide a doping method capable of controlling highly precisely a concentration of an impurity, without impairing a semiconductor characteristic, while adapted to a low-temperature process. SOLUTION: A solution layer L1 is formed by depositing a material solution (antimony solution L) containing an antimony compound constituted of only hydrogen, nitrogen, oxygen and carbon together with antimony, onto a semiconductor layer 5 for covering a surface of a substrate 7. An antimony compound layer 9 is formed on the substrate 7, by drying the antimony solution L. The antimony in the antimony compound layer 9 is diffused into the semiconductor layer 5, by heat treatment, to form an impurity area 5a. The heat treatment is carried out by emitting an energy beam h onto the antimony compound layer 9. COPYRIGHT: (C)2011,JPO&INPIT
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