发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit for generating an output voltage having a desired voltage value with a small range of fluctuation with respect to temperature. SOLUTION: The reference voltage generation circuit has a first path between an output terminal OUT and the ground of a differential amplifier A1 generating a reference voltage, for connecting a first resistor R1, a second resistor R2, and a first transistor B1 whose emitter is connected to the second resistor R2 and whose collector is connected to the ground, and a second path between the output terminal OUT and the ground of the differential amplifier A1, for connecting a third resistor R1b and a second transistor B2 whose emitter is connected to the third resistor and whose collector is connected to the ground. A first node N1 between the first resistor R1 and the second resistor R2 and a second node N2 between the third resistor R1b and the emitter of the second transistor B2 are connected to the pair of input terminals of the differential amplifier. The emitter size of the first transistor B1 is larger than the emitter size of the second transistor B2. The reference voltage generation circuit further includes a fourth resistor R3. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011039620(A) 申请公布日期 2011.02.24
申请号 JP20090184086 申请日期 2009.08.07
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 MATSUO YOSHIHIKO;MORISHITA YUJIRO
分类号 G05F3/30;H01L21/822;H01L27/04;H03F1/30;H03F3/34;H03F3/45 主分类号 G05F3/30
代理机构 代理人
主权项
地址