| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad suitable for polishing an interlayer insulating film (ILD). <P>SOLUTION: The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, insulator, barrier and tungsten. The polymeric matrix of the polishing pad is a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 wt.% total polypropylene glycol and polytetramethylene ether glycol, and the mixture of polypropylene glycol and polytetramethylene ether glycol has a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 wt.%, and the toluene diisocyanate is 15 to 35 wt.% total monomer or partially reacted toluene diisocyanate monomer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
