METHOD OF FABRICATING AN ARRAY SUBSTRATE

摘要

PURPOSE: A method for fabricating an array substrate is provided to crystallize amorphous silicon without using an additional ion implant device. CONSTITUTION: A substrate includes a gate wire extended in one direction and a gate electrode(208) connected to the gate wire. A gate insulating film(212) and pure amorphous silicon layer and an inorganic insulation layer and photo-converted layer are sequentially formed on the gate wire and the gate electrode in a upper surface of the substrate. A laser beam is irradiated onto the photo-converted layer to finely crystallize the pure amorphous silicon layer on a poly silicon layer. The photo-converted layer is removed, and a photoresist pattern(281) is formed in correspondence to the gate electrode on the amorphous insulation layer.