发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A thin film transistor array panel and a method for manufacturing the same are provided to reduce the signal delay while not forming a gate wiring and gate insulating layer thickly by forming a secondary insulating layer. CONSTITUTION: A gate line has a gate electrode while locating on the insulating substrate. A secondary insulating layer(30) locates on the gate line. A gate insulating layer(140) is located on the supplementary insulating layer and an insulating substrate. A semiconductor(154) is locates on the gate insulating layer. The data line has the source electrode piled up one with the above semiconductor. A drain electrode(175) puts opposite to the source electrode while being piled up one with the semiconductor. A protective film locates on the data line and the drain electrode. The pixel electrode is connected to the drain electrode.
申请公布号 KR20110017785(A) 申请公布日期 2011.02.22
申请号 KR20090075435 申请日期 2009.08.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SUNG RYUL;YOO, HYEONG SUK;CHO, BYEONG HOON;SEO, O SUNG;KIM, SEONG HUN
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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