发明名称 |
Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same |
摘要 |
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.
|
申请公布号 |
US7893449(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20060097054 |
申请日期 |
2006.12.13 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
FUKUNAGA NAOKI;SHINOHARA HIRONAO;OSAWA HIROSHI |
分类号 |
H01L29/22;H01L33/00;H01L33/02;H01L33/22;H01L33/32;H01L33/42 |
主分类号 |
H01L29/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|