Nonvolatile memory devices that utilize read/write merge circuits

摘要

An integrated circuit memory device includes an array of nonvolatile memory cells (e.g., variable resistance cells) having a first plurality of lines electrically coupled to memory cells therein. A read/write control circuit is provided. The read/write control circuit includes a read/write merge circuit and a column selection circuit. The read/write control circuit, which is configured to drive a selected one of the first plurality of lines with unequal write and read voltages during respective write and read operations, includes a compensating unit. This compensating unit is configured to provide a read compensation current to the selected one of the first plurality of lines circuit during the read operation.