发明名称 Semiconductor device for preventing erroneous write to memory cell in switching operational mode between normal mode and standby mode
摘要 When an operational mode is shifted to a standby mode, a first transistor is brought into a conduction state by a control signal, and a word line is thereby clamped to a ground voltage. Further, a second transistor is brought into a non-conduction state, and supply of an internal power supply voltage to a word line driver is shut off. Subsequently, the supply of the internal power supply voltage is halted for saving electrical power. When the operational mode returns to a normal mode, the supply of the internal power supply voltage is started, and subsequently, the first transistor is brought into the non-conduction state by the control signal, and the second transistor is thereby brought into the conduction state.
申请公布号 US7894292(B2) 申请公布日期 2011.02.22
申请号 US20090360521 申请日期 2009.01.27
申请人 RENESAS ELECTRONICS CORPORATION 发明人 AGARI TAKESHI;SATO HIROTOSHI;AKAI KIYOYASU;SENDA MINORU;NAKAI HIROAKI
分类号 G11C5/14 主分类号 G11C5/14
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