发明名称 BLANK MASK AND PHOTO MASK FABRICATED USING IT
摘要 <p>PURPOSE: A method for manufacturing a blank mask of binary intensity is provided to ensure excellent pattern transfer accuracy and to reduce loading effect. CONSTITUTION: A method for manufacturing a blank mask(100) of binary intensity comprises: a step of preparing a transparent substrate(1); a step of forming a metal layer(7) on the transparent substrate; a step of forming a hard mask film on the metal layer; and a step of forming a resist film(6) on the hard mask film. The metal layer comprises a single layer or multilayer.</p>
申请公布号 KR20110016727(A) 申请公布日期 2011.02.18
申请号 KR20090074372 申请日期 2009.08.12
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU
分类号 G03F1/50;H01L21/027 主分类号 G03F1/50
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