发明名称 |
BLANK MASK AND PHOTO MASK FABRICATED USING IT |
摘要 |
<p>PURPOSE: A method for manufacturing a blank mask of binary intensity is provided to ensure excellent pattern transfer accuracy and to reduce loading effect. CONSTITUTION: A method for manufacturing a blank mask(100) of binary intensity comprises: a step of preparing a transparent substrate(1); a step of forming a metal layer(7) on the transparent substrate; a step of forming a hard mask film on the metal layer; and a step of forming a resist film(6) on the hard mask film. The metal layer comprises a single layer or multilayer.</p> |
申请公布号 |
KR20110016727(A) |
申请公布日期 |
2011.02.18 |
申请号 |
KR20090074372 |
申请日期 |
2009.08.12 |
申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU |
分类号 |
G03F1/50;H01L21/027 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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