| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a pattern capable of simultaneously forming a plurality of minute patterns of different sizes, and a method of manufacturing a semiconductor device. SOLUTION: This method of forming a pattern includes processes of: forming a plurality of regions 1, 2 in accordance of difference of pattern sizes on a base; separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions 1, 2; subjecting the block copolymers in the respective regions 1, 2 to phase separation; and selectively removing a specific phase in the respective block copolymers subjected to phase separation and forming patterns of the block copolymers different in pattern size for each of the respective regions 1, 2. COPYRIGHT: (C)2011,JPO&INPIT
|
