| 摘要 |
<p>PURPOSE: A photoresist composition is provided to be used in ArF eximer laser lithography, KrF eximer laser lithography, and ArF immersion lithography and to ensure resist pattern with excellent exposure latitude. CONSTITUTION: A photoresist composition contains resin, acid generator, and compound of chemical formula C1. In chemical formula C1, R^c2 is C7-20 aralkyl group having one or more substituents; and R=c1 is denoted by chemical formula 1. In chemical formula 1, R^c3 and R^c4 are independently hydrogen atom or aliphatic hydrocarbon group of straight chain, side chain, or cyclic C1-C12; and R^c5 is bivalent organic group of C1-30.</p> |
