| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving device which has excellent reliability and is easily manufactured. <P>SOLUTION: At least a semiconductor mesa 120 and a semiconductor layer 107a covering at least the side wall of the mesa 120 are formed on an n-type semiconductor substrate 201. The semiconductor mesa 120 includes at least a light absorption layer 104 and a p-type contact layer 106. The principal surface of the semiconductor substrate 101 tilts at an angle θ of rotation to the (100) plane by using the <01-1> direction as an axis. The angle θ of rotation is 0.1°≤¾θ¾≤10°. <P>COPYRIGHT: (C)2011,JPO&INPIT |
