| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To keep flatness of a memory cell array having a lamination structure. <P>SOLUTION: This semiconductor memory device includes: a plurality of first selection line groups WL laminated in a vertical direction, and each including a plurality of first selection lines extending in a first direction; a plurality of second selection line groups BL alternately laminated with the first selection line groups WL, and each including a plurality of second selection lines extending in a second direction that intersects with the first direction; and memory cells MC arranged between the first selection lines and the second selection lines. Even-numbered layers and odd-numbered layers out of the plurality of first selection line groups WL are arranged to be shifted in the second direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
