发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress a decrease in exhaust efficiency of a processing chamber even when an interval between an electrode and a back member is made narrow. SOLUTION: A high-frequency electrode 320 is disposed in the processing chamber 100, and a high frequency is applied to it. The top surface of the high-frequency electrode 320 faces a workpiece 10. The back member 210 is provided apart from a backside of the high-frequency electrode 320 so as to cover the backside. A space between the back member 210 and high-frequency electrode 320 serves as the exhaust route of the processing chamber 100. The high-frequency electrode 320 is formed of: a plate-like surface member 322 forming the top surface of the high-frequency electrode 320; and a housing 324 fitted to the backside of the surface member 322. The surface member 322 is made of metal such as stainless steel, for example. The housing 324 is in a box shape, and made of a porous plate, for example, a punching metal obtained by forming many holes in a metal plate such as stainless steel sheet by punching. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011035227(A) 申请公布日期 2011.02.17
申请号 JP20090181257 申请日期 2009.08.04
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 YOSHIDA HIROTOMO;SHIMIZU HITOSHI
分类号 H01L21/31;C23C16/509 主分类号 H01L21/31
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